ESDR0502BT1G【PDF 2/4 页】IC LOW CAP ESD 2CH SC75

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ESDR0502B

ELECTRICAL CHARACTERISTICS

(T A = 25 ° C unless otherwise noted)

I

Symbol

I PP

V C

Parameter

Maximum Reverse Peak Pulse Current

Clamping Voltage @ I PP

I F

I R V F

V RWM

I R

V BR

Working Peak Reverse Voltage

Maximum Reverse Leakage Current @ V RWM

Breakdown Voltage @ I T

V C V BR V RWM

I T

V

I T

I F

Test Current

Forward Current

V F

P pk

C

Forward Voltage @ I F

Peak Power Dissipation

Capacitance @ V R = 0 and f = 1.0 MHz

I PP

Uni ? Directional TVS

ELECTRICAL CHARACTERISTICS (T A = 25 ° C unless otherwise noted, V F = 1.1 V Max. @ I F = 10 mA for all types)

V RWM

(V)

I R ( m A)

@ V RWM

V BR (V)

@ I T

(Note 2)

I T

C (pF),

uni ? directional

(Note 3)

C (pF),

bi ? directional

(Note 4)

V C (V)

@ I PP = 1 A

(Note 5)

V C

Per

IEC61000 ?

Device

ESDR0502B

Device

Marking

AD

Max

5.0

Max

1.0

Min

5.8

mA

1.0

Typ

0.5

Max

0.9

Typ

0.25

Max

0.45

Max

15

4 ? 2

(Note 6)

Figures 1

and 2

2.

3.

4.

5.

6.

V BR is measured with a pulse test current I T at an ambient temperature of 25 ° C.

Uni ? directional capacitance at f = 1 MHz, V R = 0 V, T A = 25 ° C (pin1 to pin 3; pin 2 to pin 3).

Bi ? directional capacitance at f = 1 MHz, V R = 0 V, T A = 25 ° C (pin1 to pin 2).

Surge current waveform per Figure 5.

Typical waveform. For test procedure see Figures 3 and 4 and Application Note AND8307/D.

Figure 1. ESD Clamping Voltage Screenshot

Positive 8 kV contact per IEC 61000 ? 4 ? 2

Figure 2. ESD Clamping Voltage Screenshot

Negative 8 kV contact per IEC 61000 ? 4 ? 2

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